规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.0054 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0017 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 12 V, 7.5 GHz, 700 mW, 150 mA, 70 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 20 V, 0.00075 ohm, 10 V, 800 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, 2.2 A, -150 V, 240 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2 A, 55 V, 0.14 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.03 ohm, -4.5 V, -1.5 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 10 A, 30 V, 0.0122 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 18 A, 150 V, 0.047 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.5 A, 500 V, 800 mohm, 10 V, 4 V
(EN)
RENESAS
晶体管, MOSFET, P沟道, -3.3 A, -30 V, 0.054 ohm, -10 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 1.8 A, 30 V, 0.145 ohm, 10 V, 2.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.044 ohm, 10 V, 1.4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 1.7 A, 600 V, 2.97 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 15 V, 300 mW, 200 mA, 120 hFE
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 10 A, 20 V, 0.0107 ohm, 10 V, 2.55 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.5 A, 150 V, 0.041 ohm, 10 V, 2 V
(EN)DIODES INC.
单晶体管 双极, NPN, 60 V, 150 MHz, 350 mW, 1 A, 100 hFE
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1.6 A, 60 V, 0.092 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.6 A, 100 V, 200 mohm, 10 V, 4 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 40 V, 300 MHz, 200 mW, 200 mA, 100 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.004 ohm, 10 V, 3 V
(EN)
