规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, N沟道, 9 A, 550 V, 0.36 ohm, 10 V, 3 V
(EN)
TOSHIBA
功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 1.7 ohm, 10 V, 2.4 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
(EN)
NEXPERIA
单晶体管 双极, NPN, 160 V, 250 mW, 300 mA, 80 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 6.6 A, 500 V, 0.86 ohm, 13 V, 3 V
(EN)
MULTICOMP
单晶体管 双极, NPN, 160 V, 300 MHz, 625 mW, 600 mA, 80 hFE
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 68 A, 30 V, 0.0078 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, BRT, 双N沟道, 300 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.5 A, 30 V, 19 mohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 60 V, 0.092 ohm, 10 V, 2.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 1.76 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 12 V, 8 GHz, 175 mW, 20 mA, 70 hFE
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 310 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)TOSHIBA
晶体管, MOSFET, 功率, N沟道, 3 A, 500 V, 2.3 ohm, 10 V, 2.4 V
(EN)
NEXPERIA
场效应管, MOSFET, P沟道, 30V, SOT1118
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, P沟道, -24 A, -30 V, 28 mohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 80 V, 0.013 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 27 mohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.024 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 28 A, 20 V, 0.0023 ohm, 4.5 V, 800 mV
(EN)
