规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, N沟道, 30 A, 30 V, 6.5 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 28 A, 40 V, 19 mohm, 10 V, 2.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 900 mA, 150 V, 1.2 ohm, 10 V, 5.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 100 V, 25 MHz, 20 W, 2 A, 200 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 150 V, 185 mohm, 10 V, 5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 0.41 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 50 V, 150 MHz, 500 mW, 2 A, 200 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -20 V, 1 W, -1.5 A, 50 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0018 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 100 V, 0.115 ohm, 10 V, 4 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 80 V, 150 MHz, 550 mW, 4 A, 400 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0068 ohm, 10 V, 1.85 V
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 540 mohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 270 mA, 60 V, 5 ohm, 10 V, 2.4 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 120 MHz, 1.5 W, 2 A, 140 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 80 V, 130 MHz, 1.5 W, 5 A, 200 hFE
(EN)
NEXPERIA
单晶体管 双极, NPN, 40 V, 250 mW, 200 mA, 30 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0073 ohm, 10 V, 1.5 V
(EN)
MULTICOMP
晶体管, 单结(UJT), 1.5 A, 1.5 A, 7 mA, TO-92, 3引脚, 125 °C
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.054 ohm, -4.5 V, -1.4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2 A, 400 V, 2.8 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -80 V, 50 MHz, 1.5 W, 1.5 A, 40 hFE
(EN)
