规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, P沟道, 9.8 A, -20 V, 0.0085 ohm, 12 V, -1.4 V
(EN)
ON SEMICONDUCTOR
晶体管 双极-射频, PNP, -45 V, 100 MHz, 300 mW, -500 mA, 250 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 850 mA, 200 V, 1.1 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 78 A, 30 V, 0.0027 ohm, 10 V, 2.2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, P沟道, -3 A, -60 V, 0.13 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 62 A, 150 V, 0.0103 ohm, 20 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, 40 V, 10 mA, 40 mA, -2.7 V, SOT-23, 开关
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 双路 PNP, -50 V, -100 mA, 10 kohm, 10 kohm
(EN)DIODES INC.
单晶体管 双极, NPN, 50 V, 140 MHz, 625 mW, 2 A, 450 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 46 A, 20 V, 0.00155 ohm, 10 V, 1 V
(EN)
RENESAS
晶体管, MOSFET, P沟道, -2.1 A, -20 V, 0.142 ohm, -4.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 38.3 A, 30 V, 0.006 ohm, 10 V, 1.2 V
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 12 V, 400 MHz, 225 mW, 200 mA, 25 hFE
(EN)
INFINEON
晶体管, MOSFET, P沟道, -2.2 A, -150 V, 0.24 ohm, -10 V, -5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, 30 V, -2 mA, -25 mA, 4 V, TO-92, JFET
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 40 V, 300 MHz, 350 mW, 800 mA, 300 hFE
INFINEON
晶体管, MOSFET, P沟道, -140 mA, -250 V, 8 ohm, -10 V, -1.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 30 V, 3.6 mohm, 10 V, 1.4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 19 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 4.5 V, 30 GHz, 250 mW, 80 mA, 50 hFE
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -4.8 A, -20 V, 21 mohm, -4.5 V, -1.5 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 6.5 A, 30 V, 0.023 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5 A, 150 V, 0.041 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 6.6 A, -100 V, 480 mohm, -10 V, -4 V
(EN)
