规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 760 mA, -20 V, 0.26 ohm, -4.5 V, -450 mV
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 双路 PNP, 50 V, -100 mA, 47 kohm, 47 kohm
(EN)
INFINEON
晶体管, MOSFET, N沟道, 44 A, 55 V, 27 mohm, 10 V, 4 V
(EN)
RENESAS
晶体管, MOSFET, P沟道, -1.8 A, -60 V, 0.158 ohm, -10 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 48 mohm, -4.5 V, -1.4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6.2 A, 40 V, 0.021 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.016 ohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 20 V, 0.0041 ohm, 10 V, 600 mV
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7 电阻比率
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0075 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 40 V, 300 MHz, 350 mW, 200 mA, 100 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道+肖特基, 14.5 A, 30 V, 0.0045 ohm, 10 V, 1.5 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 12 V, 140 MHz, 2.1 W, 5.3 A, 250 hFE
(EN)
NEXPERIA
单晶体管 双极, 通用, PNP, 45 V, 250 mW, 100 mA, 125 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 72 A, 200 V, 0.0186 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0122 ohm, 10 V, 4 V
(EN)
DIODES INC.
双极晶体管阵列, 双路, NPN, PNP, 60 V, 1.1 W, 1 A, 100 hFE, SOT-23
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6.4 A, 30 V, 0.021 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 25 V, 65 MHz, 12.5 W, 5 A, 10 hFE
(EN)NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm
(EN)DIODES INC.
双极晶体管阵列, 双路, NPN, 45 V, 200 mW, 100 mA, 200 hFE, SOT-363
(EN)
INFINEON
二极管, 射频/PIN, 单, 1.35 ohm, 150 V, SC-79, 2引脚, 0.35 pF
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0057 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.00097 ohm, 10 V, 3.9 V
(EN)RENESAS
晶体管, MOSFET, P沟道, -1.8 A, -30 V, 0.195 ohm, -4.5 V
(EN)
