规格：MSL MSL 1 -无限制,
INFINEON
晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 210 mW, 60 mA, 60 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 20 V, 0.0125 ohm, 4.5 V, 400 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.3 A, 200 V, 0.3 ohm, 10 V, 4 V
(EN)
DIODES INC.
单晶体管 双极, PNP, -45 V, 310 mW, -500 mA, 400 hFE
(EN)ON SEMICONDUCTOR
晶体管, JFET, JFET, -25 V, 12 mA, 30 mA, -4 V, SOT-23, JFET
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 5.5 A, 30 V, 0.032 ohm, 10 V, 1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 40 V, 6.6 mohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, FemtoFET™, P沟道, -1.7 A, -20 V, 0.11 ohm, -8 V, -950 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.5 A, 100 V, 0.019 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
单晶体管 双极, PNP, -40 V, 1.6 W, -5 A, 250 hFE
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 84 A, 80 V, 0.0074 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0032 ohm, -10 V, -3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 73 A, 650 V, 0.032 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.042 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11.2 A, 100 V, 0.0081 ohm, 10 V, 2.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 0.54 ohm, 5 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5 A, 60 V, 45 mohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.185 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 44 A, 60 V, 12.3 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -61 A, -60 V, 0.016 ohm, -4.5 V, -1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0008 ohm, 10 V, 1.9 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00099 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10.2 A, 30 V, 0.011 ohm, 10 V, 2.5 V
(EN)
