规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 52 A, 30 V, 0.0046 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 150 MHz, 15 W, -3 A, 140 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 20 V, 120 MHz, 15 W, 5 A, 160 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 14 A, 60 V, 0.054 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 90 A, 30 V, 0.0025 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0009 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 15 A, 80 V, 0.059 ohm, 1.7 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.014 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 150 MHz, 15 W, -3 A, 200 hFE
(EN)
INFINEON
晶体管 双极-射频, NPN, 4.5 V, 30 GHz, 250 mW, 80 mA, 50 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 36 A, 200 V, 0.027 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 64 A, 55 V, 14 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 55 A, 100 V, 0.0105 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 9 A, 100 V, 0.18 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.5 A, -20 V, 35 mohm, -4.5 V, -900 mV
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 4.9 A, 30 V, 0.044 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 300 MHz, 15 W, 2 A, 300 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 60 V, 20 W, 10 A, 5 hFE
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 200 V, 125 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 71 A, 30 V, 0.0055 ohm, 10 V, 1.48 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0026 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -80 A, -60 V, 0.021 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -6.6 A, -100 V, 0.41 ohm, -10 V, -4 V
(EN)
