规格：工作温度最高值 140°C,
VISHAY
标准功率二极管, 1.5 kV, 2 A, 单, 1.6 V, 20 μs, 30 A
(EN)
IXYS SEMICONDUCTOR
晶闸管, 1600 V, 100 mA, 48 A, 75 A, TO-247AD, 3 引脚
(EN)
VISHAY
标准功率二极管, 单, 1.5 kV, 2 A, 1.6 V, 2 μs, 30 A
(EN)IXYS SEMICONDUCTOR
晶闸管, 1200 V, 100 mA, 48 A, 75 A, TO-247AD, 3 引脚
(EN)
IXYS SEMICONDUCTOR
晶闸管, 1.6 kV, 150 mA, 320 A, 500 A, 模块, 7 引脚
(EN)
VISHAY
晶闸管, 1200 V, 150 mA, 130 A, 220 A, TO-94
(EN)
SOLID STATE
TRANSISTOR, 30V, 0.05A, 0.45W, TO-5
(EN)SOLID STATE
TRANSISTOR, 30V, 0.05A, 0.45W, TO-5
(EN)SOLID STATE
TRANSISTOR, 30V, 0.05A, 0.45W, TO-5
(EN)
VISHAY
雪崩二极管, 2A, 1.5KV, SOD-57, 整卷
(EN)VISHAY
晶闸管, 1200 V, 100 mA, 110 A, 175 A, TO-94
(EN)
ON SEMICONDUCTOR
控制器, PWM, 28V-4.7V电源, 2.4 MHz, NSOIC-8
(EN)
TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 8A输出, -999ms 延迟, SOT-23-6
(EN)ON SEMICONDUCTOR
控制器, PWM, 28V-4.7V电源, 600 kHz, NSOIC-8
(EN)
ON SEMICONDUCTOR
驱动器, MOSFET, 低压侧, 4.5V-20V电源, 5A输出, 20ns延迟, SOIC-8
(EN)ON SEMICONDUCTOR
控制器, PWM, 28V-4.7V电源, 1.2 MHz, NSOIC-8
(EN)ON SEMICONDUCTOR
芯片, 场效应管, MOSFET驱动器, 低压侧, NSOIC-8
(EN)TEXAS INSTRUMENTS
门驱动器, IGBT/MOSFET, 高压侧和低压侧, 10V-32V电源, 5A输出, 17ns延迟, SOT-23-6
(EN)
TEXAS INSTRUMENTS
芯片, MOSFET驱动器, 低压侧, 6-SOT-23
(EN)
TEXAS INSTRUMENTS
驱动器芯片, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, SON-8
(EN)TEXAS INSTRUMENTS
门驱动器, MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, SOIC-8
(EN)
TEXAS INSTRUMENTS
芯片, IGBT/MOSFET, 低压侧, 4.5V-18V电源, 4A输出, 13ns延迟, SOT-23-5
(EN)TEXAS INSTRUMENTS
芯片, IGBT/MOSFET, 低压侧, 4.5V-18V电源, 5A输出, SOIC-8
(EN)
