规格：工作温度最高值 140°C,
TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 4A输出, 13ns延迟, SON-6
TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 4A输出, 7ns延迟, SOT-23-5
(EN)
TEXAS INSTRUMENTS
门驱动器, IGBT/MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, SOIC-8
(EN)
LINEAR TECHNOLOGY
电压稳压器, LDO, 可调, 3V至80V输入, 300mV压差, 1.275V至60V/50mA输出, MSOP-8
(EN)ANALOG DEVICES
可编程/可变增益放大器, 1 放大器, 1个放大器, 700 kHz, -40 °C, 140 °C, 2.7V 至 5.5V
(EN)TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, SOIC-8
(EN)TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 4A输出, 7ns延迟, SOT-23-5
(EN)TEXAS INSTRUMENTS
MOSFET驱动器, 低压侧, 4.5V-18V电源, 4A和5ohm输出, SOT-23-5
TEXAS INSTRUMENTS
驱动器, MOSFET, 高压侧和低压侧, 8V-17V电源, 4A输出, 17ns延迟, SOIC-8
(EN)
TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 6ns延迟, DIP-8
(EN)TEXAS INSTRUMENTS
高压侧, 低压侧驱动器, 高压侧和低压侧, 8V-17V电源, 4A输出, 21ns延迟, SOIC-8
(EN)
TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, MSOP-8
(EN)
TEXAS INSTRUMENTS
DRIVER, IGBT MOSFET, 1 CHANNEL, 6-SOT-23
(EN)TEXAS INSTRUMENTS
驱动器芯片, MOSFET, 驱动器, 高压侧和低压侧, 8V-17V电源, 3A输出, 20ns延迟, SOIC-8
(EN)TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, SOIC-8
(EN)TEXAS INSTRUMENTS
驱动器, MOSFET, 高压侧和低压侧, 8V-17V电源, 4A输出, 21ns延迟, SOIC-8
(EN)
TEXAS INSTRUMENTS
驱动器, MOSFET, 高压侧和低压侧, 8V-17V电源, 3A输出, 20ns延迟, HSOP-8
(EN)
TEXAS INSTRUMENTS
驱动器, MOSFET, 高压侧和低压侧, 8V-17V电源, 4A输出, 17ns延迟, VSON-8
(EN)LINEAR TECHNOLOGY
固定电压稳压器, LDO, 3V至80V, 300mV压差, 5V输出, 50mA输出, MSOP-8
(EN)TEXAS INSTRUMENTS
驱动器芯片, MOSFET, 高压侧和低压侧, 8V-17V电源, 4A输出, 5ns延迟, VSON-8
(EN)TEXAS INSTRUMENTS
驱动器芯片, 高压侧和低压侧, 8V-17V电源, 3A输出, 20ns延迟, SOIC-8
(EN)TEXAS INSTRUMENTS
驱动器芯片, MOSFET, 高压侧和低压侧, 8V-17V电源, 3A输出, 20ns延迟, SOIC-8
(EN)TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 高压侧和低压侧, 10V-35V电源, 5A输出, 17ns延迟, SOT-23-5
(EN)
TEXAS INSTRUMENTS
DRIVER, MOSFET, LOW/HIGH-SIDE, VSON-8
(EN)
