品牌：INFINEON,规格：工作温度最高值 150°C,
INFINEON
功率场效应管, MOSFET, N沟道, 6.1 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 31 A, 600 V, 99 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 55 mW, 12 mA, 95 hFE
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.171 ohm, 10 V, 4 V
(EN)
INFINEON
单晶体管, IGBT, 75 A, 2.35 V, 390 W, 600 V, TO-247AD, 3 引脚
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5 A, 55 V, 60 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 500 V, 2.7 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 25 A, 650 V, 0.11 ohm, 10 V, 3 V
(EN)INFINEON
单晶体管, IGBT, 60 A, 1.85 V, 308 W, 600 V, TO-247AC, 3 引脚
(EN)
INFINEON
晶体管, MOSFET, N沟道, 6.9 A, 100 V, 26 mohm, 10 V, 5.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14 A, 100 V, 180 mohm, 10 V, 4 V
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INFINEON
晶体管, MOSFET, N沟道, 14.1 A, 500 V, 0.35 ohm, 13 V, 3 V
(EN)INFINEON
单晶体管, IGBT, 40 A, 2.4 V, 160 W, 600 V, TO-220AB, 3 引脚
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 650 mohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.0183 ohm, 10 V, 2.1 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16.4 A, 650 V, 0.18 ohm, 10 V, 3 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, 2.3 A, -30 V, 250 mohm, -10 V, -1 V
(EN)INFINEON
单晶体管, IGBT, 40 A, 2.5 V, 160 W, 600 V, TO-247AC, 3 引脚
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 8.1 A, 30 V, 0.014 ohm, 4.5 V, 1.1 V
(EN)INFINEON
单晶体管, IGBT, 11.8 A, 2.16 V, 34 W, 600 V, TO-220FP, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 31 mohm, 10 V, 1 V
(EN)
INFINEON
单晶体管, IGBT, 标准速度, N通道, 57 A, 1.75 V, 200 W, 1.2 kV, TO-247AD, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 13 A, 1.8 V, 90 W, 600 V, TO-220AB, 3 引脚
(EN)
INFINEON
MOSFET, N CHANNEL, 25V, 49A, PQFN-5
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V
(EN)
