品牌：STMICROELECTRONICS,规格：工作温度最高值 150°C,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道, 800V, 3A, TO-220
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 850 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, PNP, -60 V, 2 W, 8 A, 20000 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, PNP, 100 V, 33 W, -12 A, 1000 hFE
(EN)STMICROELECTRONICS
单晶体管, IGBT, 60 A, 2.5 V, 200 W, 600 V, TO-220, 3 引脚
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 500 V, 340 mohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.5 A, 1 kV, 3.7 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, NPN, 100 V, 33 W, 12 A, 1000 hFE
(EN)
STMICROELECTRONICS
双极晶体管
(EN)STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.2 A, 620 V, 1.28 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 51 A, 600 V, 0.047 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 550 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
三端双向可控硅, 600 V, 1 W, 1 V, 160 A
(EN)STMICROELECTRONICS
单晶体管 双极, PNP, -80 V, 50 W, -10 A, 120 hFE
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 33 A, 650 V, 0.07 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3.5 A, 55 V, 60 mohm, 5 V, 2.5 V
(EN)
