品牌：STMICROELECTRONICS,规格：工作温度最高值 150°C,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 125 A, 100 V, 0.0045 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 24 A, 550 V, 0.08 ohm, 30 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 14 A, 500 V, 0.2 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 200 V, 100 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 200 V, 38 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5 A, 525 V, 1 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
单晶体管, IGBT, 10 A, 2.5 V, 60 W, 600 V, TO-263, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 10 A, 2.5 V, 60 W, 600 V, TO-263, 3 引脚
(EN)STMICROELECTRONICS
IGBT, 1.3V, 10A, TO-252-3
(EN)STMICROELECTRONICS
单晶体管, IGBT, 9 A, 2.5 V, 25 W, 600 V, TO-220FP, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 16 A, 2.5 V, 35 W, 600 V, TO-220FP, 3 引脚
(EN)
STMICROELECTRONICS
单晶体管, IGBT, 42 A, 2.5 V, 125 W, 600 V, TO-247, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 70 A, 2.5 V, 250 W, 600 V, TO-247, 3 引脚
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 25 A, 12 V, 0.0022 ohm, 4.5 V, 500 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 35 A, 30 V, 1.4 mohm, 10 V, 1.55 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19 A, 600 V, 0.16 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 500 mA, 100 V, 700 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 300 mA, 600 V, 15 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 250 mA, 800 V, 13 ohm, 30 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2 A, 100 V, 0.23 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.07 ohm, 20 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6.5 A, 30 V, 0.039 ohm, 10 V, 1 V
(EN)
