规格：工作温度最高值 150°C,
INFINEON
晶体管, MOSFET, N沟道, 5 A, 500 V, 1.7 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2 A, 400 V, 2.8 ohm, 10 V, 5 V
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 65 V, 100 MHz, 250 mW, 100 mA, 110 hFE
(EN)
NEXPERIA
单管二极管 齐纳, 2.4 V, 300 mW, SOD-523, 5 %, 2 引脚, 150 °C
(EN)
MULTICOMP
二极管, 超快恢复型, 125mA, 85V, SOT-23-3
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0053 ohm, 10 V, 1.9 V
(EN)
MULTICOMP
单管二极管 齐纳, 15 V, 3 W, DO-204AC, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET , 30V, 6.3A, N通道*NIC*
(EN)
NEXPERIA
二极管 小信号, 双共阳极, 90 V, 130 mA, 1.25 V, 4 ns, 4 A
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 4A, TO-236
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 45 V, 125 MHz, 350 mW, 200 mA, 120 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -40 V, 110 MHz, 1.1 W, -4 A, 200 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 400 V, 3.6 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 4 V, 42 GHz, 500 mW, 150 mA, 110 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 86 A, 60 V, 0.0055 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
齐纳二极管
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.5 A, 900 V, 4.1 ohm, 10 V, 3.75 V
(EN)
NEXPERIA
单管二极管 齐纳, 18 V, 375 mW, SOD-123F, 2 %, 2 引脚, 150 °C
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
(EN)NEXPERIA
小信号肖特基二极管, 共阳极, 40 V, 200 mA, 550 mV, 1 A, 150 °C
(EN)DIODES INC.
单晶体管 双极, PNP, -45 V, 100 MHz, 150 mW, -100 mA, 520 hFE
(EN)
MICRO COMMERCIAL COMPONENTS
齐纳二极管, 3W, 13V, DO-214AC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 1.7A
(EN)
NEXPERIA
双极晶体管阵列, 双PNP, 30 V, 250 mW, -100 mA, 220 hFE, SOT-143B
(EN)
ROHM
晶体管, MOSFET, N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V
(EN)
