规格：工作温度最高值 150°C,
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV
(EN)
DIODES INC.
单管二极管 齐纳, 精准, 15 V, 200 mW, SOD-323, 5 %, 2 引脚, 150 °C
(EN)
MULTICOMP
齐纳二极管, 500mW, 27V, SOD-123
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 8.3 A, 30 V, 0.0205 ohm, 10 V, 2 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双P沟道, -4.5 A, -20 V, 0.04 ohm, -4.5 V, -1 V
DIODES INC.
晶体管, MOSFET, P沟道, -3.5 A, -60 V, 0.11 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 10 A, 24 V, 0.0105 ohm, 4.5 V, 1.3 V
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.018 ohm, 10 V
(EN)
DIODES INC.
快速/超快二极管, 单, 200 V, 2 A, 900 mV, 25 ns, 50 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 78 A, 100 V, 0.0059 ohm, 10 V, 3.2 V
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 3.7 A, 30 V, 0.047 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -4.4 A, -20 V, 0.037 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -6.4 A, -20 V, 0.023 ohm, 4.5 V, -1 V
(EN)
NEXPERIA
整流器, 肖特基, 1.5A, 30V, SOD-123F
(EN)
ROHM
小信号肖特基二极管, 单, 40 V, 100 mA, 690 mV, 1 A, 150 °C
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.085 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 5.1 V, 500 mW, SOD-523, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 15 V, 500 mW, SOD-123, 2 引脚, 150 °C
(EN)ON SEMICONDUCTOR
单管二极管 齐纳, 16 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 50 V, 420 MHz, 1 W, 1 A, 200 hFE
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 350 mA, 30 V, 2.9 ohm, 4 V, 1.3 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 20 V, 150 MHz, 1.5 W, 5 A, 180 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.03 ohm, -4.5 V, -1.4 V
(EN)
