规格：工作温度最高值 150°C,
ON SEMICONDUCTOR
晶体管, JFET, -15 V, 16 mA, 32 mA, -1.4 V, SOT-323, JFET
(EN)
MULTICOMP
快速/超快功率二极管, 1 kV, 1 A, 单, 1.7 V, 75 ns, 30 A
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 音频, PNP, -80 V, 40 MHz, 70 W, -10 A, 60 hFE
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 10 A, 24 V, 0.0093 ohm, 4.5 V, 1.3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 22.4 A, 600 V, 0.162 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10 A, 8 V, 0.015 ohm, 4.5 V, 800 mV
(EN)
VISHAY
单管二极管 齐纳, 2.7 V, 300 mW, SOT-23, 5 %, 3 引脚, 150 °C
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1.4 A, -8 V, 100 mohm, -4.5 V, -700 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.0135 ohm, -4.5 V, -500 mV
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 9 A, 600 V, 0.32 ohm, 10 V, 4.5 V
(EN)
ROHM
单管二极管 齐纳, 110 V, 200 mW, SOD-323FL, 2 引脚, 150 °C
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 300 mA, 50 V, 2 ohm, 5 V, 1 V
(EN)
NEXPERIA
单管二极管 齐纳, 6.2 V, 375 mW, SOD-123F, 2 %, 2 引脚, 150 °C
(EN)
PANASONIC ELECTRONIC COMPONENTS
二极管 小信号, 单, 300 V, 200 mA, 1.2 V, 1 A
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 30V, 5A, 0.024OHM, SON-6
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 5.5 A, 20 V, 0.029 ohm, 4.5 V, 1.3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.2 A, 800 V, 1.8 ohm, 10 V, 3.75 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 0.2 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 270 mA, 100 V, 6 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 420 MHz, 3.5 W, -2 A, 40 hFE
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.03 ohm, 4.5 V, 600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 57 A, 100 V, 0.0064 ohm, 10 V, 3.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 电源沟槽, 双N沟道, 98 A, 40 V, 0.002 ohm, 10 V, 2 V
(EN)
VISHAY
二极管, 齐纳, 3.3V, 0.5W, SOD-123-2
(EN)
ON SEMICONDUCTOR/FAIRCHILD
二极管, 快速恢复型, 2A, 50V, DO-214AA
(EN)
