规格：工作温度最高值 150°C,
INFINEON
场效应管, MOSFET, P沟道, -30V, -16A, SOIC
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.017 ohm, 10 V, 2.8 V
(EN)
ROHM
单管二极管 齐纳, 82 V, 200 mW, SOD-323FL, 2 引脚, 150 °C
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.042 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 31.2 A, 650 V, 0.099 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, 30 V, 50 mA, 150 mA, 10 V, SOT-323, JFET
(EN)
NEXPERIA
肖特基整流器, 单, 30 V, 1 A, SOD-123W, 2 引脚, 450 mV
(EN)
MULTICOMP
快速/超快二极管, 100 V, 3 A, 单, 950 mV, 35 ns, 100 A
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 3 A, 60 V, 0.062 ohm, 10 V, 2.6 V
(EN)
ROHM
单管二极管 齐纳, AEC-Q101, 16 V, 500 mW, SOD-323HE, 2 引脚, 150 °C
(EN)
ROHM
单管二极管 齐纳, AEC-Q101, 4.7 V, 200 mW, SOD-323FL, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双极晶体管阵列, NPN, 40 V, 300 mW, 500 mA, 300 hFE, SC-70
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.028 ohm, -10 V, -600 mV
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 8 A, 600 V, 0.45 ohm, 10 V, 2 V
(EN)ROHM
单管二极管 齐纳, 91 V, 200 mW, SOD-323FL, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 4.5 V, 1.3 V
(EN)
NEXPERIA
单晶体管 双极, 开关, PNP, -40 V, 250 MHz, 200 mW, -200 mA, 100 hFE
(EN)ROHM
单管二极管 齐纳, AEC-Q101, 8.2 V, 500 mW, SOD-323HE, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
二极管 桥式整流, 单相, 50 V, 1.5 A, DIP, 1.1 V, 4 引脚
(EN)
MICRO COMMERCIAL COMPONENTS
二极管, 超快恢复型, 1A, 600V, DO-214AC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
(EN)VISHAY
单管二极管 齐纳, 180 V, 3 W, DO-214AC, 5 %, 2 引脚, 150 °C
(EN)
MULTICOMP
肖特基二极管, 30A, 40V, TO-220AB
(EN)VISHAY
标准恢复二极管, 单, 200 V, 1 A, 1.1 V, 1.8 μs, 40 A
(EN)
