规格：工作温度最高值 150°C,
INFINEON
晶体管, MOSFET, P沟道, -4.3 A, -12 V, 50 mohm, -4.5 V, -550 mV
(EN)ROHM
晶体管, MOSFET, N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V
(EN)
NEXPERIA
单管二极管 齐纳, 9.1 V, 500 mW, SOD-123F, 2.5 %, 2 引脚, 150 °C
(EN)
TAIWAN SEMICONDUCTOR
肖特基整流器, 单, 60 V, 1 A, MicroSMA, 2 引脚, 680 mV
(EN)
DIODES INC.
标准恢复二极管, 单, 100 V, 3 A, 1.15 V, 100 A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 106 A, 40 V, 0.0037 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.1 ohm, 10 V, 1 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 25 A, 600 V, 0.117 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 2.3 V, 65 GHz, 185 mW, 80 mA, 110 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -600 mA, -20 V, 0.3 ohm, -4.5 V, -1.2 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 80 V, 160 MHz, 625 mW, 1.5 A, 300 hFE
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -40 V, 250 MHz, 200 mW, -200 mA, 30 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, 8.8 A, -60 V, 280 mohm, -10 V, -4 V
(EN)
VISHAY
场效应管, MOSFET, P通道, -20V, -350MA, SOT-416-3
(EN)DIODES INC.
单晶体管 双极, PNP, 40 V, 270 MHz, 1.25 W, 3 A, 450 hFE
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.04 ohm, 4.5 V, 950 mV
(EN)
VISHAY
单管二极管 齐纳, 10 V, 200 mW, SOD-323, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 22 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道
(EN)
ON SEMICONDUCTOR
小信号肖特基二极管, 双系列, 30 V, 200 mA, 800 mV, 600 mA, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, -30 V, 5 mA, 30 mA, -3 V, SOT-23, JFET
(EN)
MULTICOMP
肖特基整流器, 40 V, 2 A, 单, DO-214AA, 2 引脚, 550 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 45 V, 300 MHz, 500 mW, 100 mA, 420 hFE
(EN)
ROHM
晶体管, MOSFET, 低栅极驱动器, N沟道, 100 mA, 30 V, 13 ohm, 4 V, 1.5 V
(EN)ON SEMICONDUCTOR
小信号二极管
(EN)
