规格：工作温度最高值 150°C,
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 35 A, 60 V, 0.0043 ohm, 10 V, 1.3 V
(EN)
TAIWAN SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 1 A, 600 V, 8 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
小信号二极管, 100V 200mA SOT-23
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.5 A, 35 V, 0.075 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道与P沟道, 30V, 0.25/0.87Ω, 750mA, SC-70-6
(EN)
ON SEMICONDUCTOR
双极晶体管
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单管二极管 齐纳, 3.9 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)NXP
二极管, 射频/PIN, 单, 0.7 ohm, 175 V, SOD-523, 2引脚, 0.35 pF
(EN)
INFINEON
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 0.054 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
二极管 小信号, 双系列, 100 V, 200 mA, 1 V, 4 ns, 2 A
(EN)
VISHAY
晶体管, MOSFET, P沟道, -18 A, -20 V, 0.0073 ohm, -4.5 V, -1 V
(EN)
STMICROELECTRONICS
单晶体管 双极, PNP, -300 V, 20.8 W, -500 mA, 240 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 音频, NPN, 350 V, 30 MHz, 50 W, 4 A, 100 hFE
(EN)
VISHAY
单管二极管 齐纳, 8.2 V, 800 mW, DO-219AB, 2 引脚, 150 °C
(EN)
INFINEON
双路场效应管, MOSFET, N和P, 2.3 A, 30 V, 0.044 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 30 V, 100 MHz, 310 mW, 1 A, 300 hFE
(EN)
ON SEMICONDUCTOR
BIPOLAR TRANSISTOR, NPN, 60V SOT-23
(EN)
NEXPERIA
二极管阵列 齐纳, 5.1 V, 双共阳极, 350 mW, 150 °C, SOT-323
(EN)
VISHAY
二极管 桥式整流, 微型, 单相, 800 V, 1 A, SMD, 1.1 V, 4 引脚
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 11 V, 300 mW, SOD-323, 5 %, 2 引脚, 150 °C
(EN)
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 14 V, 200 mW, SOD-323F, 2 引脚, 150 °C
(EN)
NEXPERIA
单晶体管 双极, NPN, 30 V, 180 MHz, 390 mW, 2.6 A, 500 hFE
(EN)NEXPERIA
单晶体管 双极, PNP, 40 V, 200 MHz, 300 mW, 2 A, 450 hFE
(EN)
