规格：工作温度最高值 150°C,
INFINEON
晶体管, MOSFET, P沟道, -360 mA, -100 V, 1.3 ohm, -10 V, -1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -600 mV
(EN)
NEXPERIA
单管二极管 齐纳, 3.6 V, 375 mW, SOD-123F, 2 %, 2 引脚, 150 °C
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 1.5 A, 30 V, 0.185 ohm, 8 V, 850 mV
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 6.9 A, 20 V, 0.015 ohm, 4.5 V, 650 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, JFET, N沟道, -25V, SOT-23
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 20 V, 0.022 ohm, 4.5 V, 700 mV
(EN)
VISHAY
肖特基整流器, 60 V, 3 A, 单, DO-214AB, 2 引脚, 580 mV
(EN)
DIODES INC.
双极晶体管阵列, PNP, -150 V, 300 mW, -200 mA, 60 hFE, SOT-26
(EN)
ROHM
单管二极管 齐纳, 150 V, 200 mW, SOD-323FL, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.2 A, 300 V, 1.65 ohm, 10 V, 1.65 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 480 mA, 30 V, 0.54 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4.5 A, -30 V, 0.056 ohm, -4.5 V, -1.3 V
(EN)
NEXPERIA
肖特基整流器, AEC-Q101, 单, 2 A, SOT-1061, 3 引脚, 420 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.015 ohm, 10 V, 1 V
(EN)
ROHM
单管二极管 齐纳, 外延平面, 3.6 V, 1 W, SOD-123, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
射频晶体管, PNP, -30V 100MHz
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 30 V, 0.027 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 20 V, 0.00125 ohm, 10 V, 2.5 V
(EN)
DIODES INC.
单管二极管 齐纳, POWERDI?, 27 V, 1 W, SMD, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -100 V, 95 MHz, 225 mW, -100 mA, 30 hFE
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -3 A, -20 V, 0.031 ohm, -4.5 V, -650 mV
(EN)
TAIWAN SEMICONDUCTOR
标准恢复二极管, 玻璃钝化, 单, 100 V, 1 A, 1.1 V, 1.8 μs, 30 A
(EN)
