规格：工作温度最高值 150°C,
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 4.8 A, 20 V, 0.028 ohm, 4.5 V, 650 mV
(EN)
ROHM
二极管 小信号, AEC-Q101, 双共阴极, 80 V, 100 mA, 1.2 V, 4 ns, 4 A
(EN)
INFINEON
场效应管, MOSFET, N沟道, 100V, 1.6A SOT-23
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5 A, 100 V, 0.028 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 通用, 4.7 V, 300 mW, SOD-323, 5 %, 2 引脚, 150 °C
(EN)
VISHAY
晶体管, N沟道
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, N沟道
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 5.1 V, 300 mW, SOD-323, 2 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3.3 A, -30 V, 0.069 ohm, -10 V, -1.9 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 音频, NPN, 250 V, 30 MHz, 50 W, 8 A, 70 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单管二极管 齐纳, 4.7 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
MICRO COMMERCIAL COMPONENTS
开关二极管, 150mA, 100V, SOD123
(EN)
INFINEON
晶体管, MOSFET, N沟道, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 200 mA, 60 V, 1.7 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 200 mA, 600 V, 9.3 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双极晶体管阵列, NPN, 40 V, 1 W, 500 mA, 100 hFE, SOIC
(EN)
NEXPERIA
小信号肖特基二极管, 单, 40 V, 500 mA, 470 mV, 10 A, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -60 V, 200 MHz, 625 mW, -800 mA, 50 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 0.07 ohm, 4.5 V, 1.2 V
(EN)
ROHM
标准恢复二极管, AEC-Q101, 单, 400 V, 200 mA, 1.1 V, 1 A
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 240mA, SOT-323-3
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 7.3 A, 30 V, 0.023 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.00465 ohm, 10 V, 4 V
(EN)
TAIWAN SEMICONDUCTOR
快速/超快功率二极管, 600 V, 1 A, 单, 1.7 V, 75 ns, 30 A
(EN)
