规格：工作温度最高值 150°C,
DIODES INC.
快速/超快功率二极管, 单, 600 V, 1 A, 1.7 V, 75 ns, 30 A
(EN)
DIODES INC.
单管二极管 齐纳, 7.5 V, 350 mW, SOT-23, 7 %, 3 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
晶体管, JFET, -25 V, 20 mA, 40 mA, -1.2 V, SC-74, JFET
(EN)
ON SEMICONDUCTOR
单晶体管 双极, AEC-Q101, PNP, -30 V, 100 MHz, 310 mW, -1 A, 40 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0085 ohm, 10 V, 2.8 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 1.1 A, 20 V, 160 mohm, 4 V, 1.1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -15 A, -20 V, 0.0082 ohm, -4.5 V, -1.2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单管二极管 齐纳, 3.3 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C
(EN)
VISHAY
二极管
(EN)ON SEMICONDUCTOR/FAIRCHILD
单管二极管 齐纳, 15 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, 肖特基二极管, P沟道, -3.2 A, -20 V, 0.064 ohm, -4.5 V, -1.5 V
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 260 mA, 30 V, 2.8 ohm, 10 V, 1.5 V
(EN)
MULTICOMP
单晶体管 双极, 达林顿, NPN, 60 V, 125 W, 10 A, 1000 hFE
(EN)
MICRO COMMERCIAL COMPONENTS
齐纳二极管, 500mW, 60V, DO-35
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18.2 A, 30 V, 0.0078 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
齐纳二极管
(EN)
VISHAY
BRIDGE RECTIFIER, SINGLE PHASE, 1A, 600V, DFS-4
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.31 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 47 A, 30 V, 0.0094 ohm, 4.5 V, 1.3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 100 V, 3 MHz, 1.56 W, 3 A, 10 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, 3.8 A, -200 V, 0.86 ohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18 A, 200 V, 180 mohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 45 mA, -450 V, 150 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR
双极晶体管
(EN)
