规格：工作温度最高值 150°C,
VISHAY
场效应管, MOSFET, P沟道, -60V, 5.7A, POWERPAK
(EN)
NEXPERIA
单晶体管 双极, PNP, -60 V, 145 MHz, 1.65 W, -1 A, 40 hFE
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 3.7 A, 600 V, 1.89 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
双极性晶体管, PNP, -350V, SOT-23
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, 4.9 A, -30 V, 58 mohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 通用, 6.8 V, 300 mW, SOD-323, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
齐纳二极管
(EN)
NEXPERIA
单管二极管 齐纳, 13 V, 375 mW, SOD-123F, 2 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, 30V V(BR)DSS
(EN)ROHM
单管二极管 齐纳, AEC-Q101, 13 V, 200 mW, SOD-323FL, 2 引脚, 150 °C
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0029 ohm, 10 V, 3.1 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
二极管 小信号, 单, 80 V, 200 mA, 1.1 V, 10 ns, 1 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, -35 V, 2 mA, -3 V, SOT-23, JFET
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.8 A, 80 V, 16.5 mohm, 10 V, 3.2 V
(EN)NEXPERIA
单管二极管 齐纳, 2.7 V, 375 mW, SOD-123F, 2 %, 2 引脚, 150 °C
(EN)
NEXPERIA
小信号肖特基二极管, 单, 40 V, 120 mA, 370 mV, 200 mA, 150 °C
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.075 ohm, -10 V, -2.6 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 7.4 A, 700 V, 0.9 ohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V
(EN)
MICRO COMMERCIAL COMPONENTS
齐纳二极管, 5W, 11V, DO-15
(EN)
MULTICOMP
二极管, 标准恢复, 1A, 200V, DO-214AC-2
(EN)
VISHAY
单管二极管 齐纳, 3.3 V, 200 mW, SOD-323, 5 %, 2 引脚, 150 °C
(EN)
TAIWAN SEMICONDUCTOR
肖特基整流器, 90 V, 3 A, 单, DO-201AD, 2 引脚, 850 mV
(EN)
