规格：工作温度最高值 150°C,
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -6 A, -30 V, 0.033 ohm, -10 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.4 A, 100 V, 0.044 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
肖特基整流二极管, 1mA 20V SOT-323
(EN)
ROHM
双极晶体管阵列, AEC-Q101, 双PNP, -50 V, 150 mW, -150 mA, 120 hFE, SC-88
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0081OHM, 22A, POWER 56-8
(EN)
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, 双N沟道, 7.6 A, 30 V, 0.022 ohm, 10 V, 1 V
(EN)
NXP
二极管, 射频/PIN, 单, 1.4 ohm, 50 V, SOD-523, 2引脚, 0.25 pF
(EN)
TAIWAN SEMICONDUCTOR
快速/超快功率二极管, 800 V, 3 A, 单, 1.7 V, 75 ns, 125 A
(EN)
TAIWAN SEMICONDUCTOR
标准恢复二极管, 100 V, 3 A, 单, 1.1 V, 125 A
(EN)VISHAY
晶体管, MOSFET, N沟道, 36 A, 40 V, 0.0027 ohm, 10 V, 2.5 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -40V, 10.5A, SOIC
(EN)
ROHM
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.038 ohm, -10 V, -2.5 V
(EN)
VISHAY
场效应管, MOSFET, NP通道, 40V, 10/-9.2A, SOIC-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 250 mohm, 4.5 V, 700 mV
(EN)
VISHAY
场效应管, P通道, MOSFET
(EN)
VISHAY
单管二极管 齐纳, 51 V, 3 W, DO-214AC, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 25 V, 50 MHz, 350 mW, 100 mA, 400 hFE
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -3.2 A, -60 V, 0.051 ohm, -10 V, -3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 6A, POWERPAK
(EN)VISHAY
快速/超快二极管, 100 V, 1 A, 单, 1.1 V, 15 ns, 30 A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0009 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
达林顿晶体管, NPN, 80V, SOT-223
(EN)TAIWAN SEMICONDUCTOR
快速/超快二极管, 100 V, 1 A, 单, 950 mV, 35 ns, 30 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.3 A, 100 V, 0.2 ohm, 10 V, 4 V
(EN)TAIWAN SEMICONDUCTOR
快速/超快功率二极管, 600 V, 1 A, 单, 1.7 V, 35 ns, 30 A
(EN)
