规格：工作温度最高值 150°C,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3 A, -60 V, 105 mohm, -10 V, -1.6 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 190 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N沟道, 40V, SOIC
(EN)
VISHAY
场效应管, MOSFET, P沟道, D-PAK
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 2.4 V, 300 mW, SOD-323, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, JFET, N沟道, -30V, SOT-23
(EN)
INFINEON
单晶体管, IGBT, 11 A, 3.17 V, 60 W, 1.2 kV, TO-263, 3 引脚
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 335 mA, 55 V, 2.3 ohm, 4.5 V, 1 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
二极管 小信号, 单, 80 V, 200 mA, 1.1 V, 10 ns, 1 A
(EN)
VISHAY
标准恢复二极管, 100 V, 6 A, 单, 1.25 V, 2.5 μs, 400 A
(EN)
ROHM
单管二极管 齐纳, AEC-Q101, 39 V, 200 mW, SOD-323FL, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -100 V, 120 MHz, 490 mW, -2 A, 50 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 950 μohm, 10 V, 1.4 V
(EN)
DIODES INC.
单管二极管 齐纳, 9.1 V, 200 mW, SOD-323, 6 %, 2 引脚, 150 °C
(EN)
VISHAY
快速/超快二极管, 100 V, 1 A, 单, 1 V, 50 ns, 30 A
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 80 V, 3 MHz, 30 W, 3 A, 3 hFE
(EN)PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 10 V, 150 mW, SOD-523, 2 引脚, 150 °C
(EN)
NEXPERIA
单晶体管 双极, NPN, PNP, -60 V, 150 MHz, 480 mW, -1.5 A, 285 hFE
(EN)ROHM
单管二极管 齐纳, AEC-Q101, 2.7 V, 200 mW, SOD-323FL, 2 引脚, 150 °C
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0012 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 85 A, 40 V, 0.0018 ohm, 10 V, 2.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 3.8W, 8-1212
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -1.5 A, -30 V, 0.458 ohm, -4 V, -2.6 V
(EN)
