规格：工作温度最高值 150°C,
ON SEMICONDUCTOR
单管二极管 齐纳, 通用, 20 V, 3 W, DO-214AA, 5 %, 2 引脚, 150 °C
(EN)
DIODES INC.
单晶体管 双极, NPN, 30 V, 300 MHz, 300 mW, 100 mA, 600 hFE
(EN)
NEXPERIA
单管二极管 齐纳, 8.2 V, 500 mW, SOD-323F, 2 %, 2 引脚, 150 °C
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0055 ohm, 10 V, 1.5 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -90 A, -30 V, 0.0045 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 80 V, 20 W, 10 A, 1000 hFE
(EN)
DIODES INC.
单晶体管 双极, NPN, PNP, 40 V, 300 MHz, 200 mW, 600 mA, 100 hFE
(EN)
DIODES INC.
二极管 桥式整流, 单相, 1 kV, 2.5 A, MSBL, 1.1 V, 4 引脚
(EN)DIODES INC.
二极管 桥式整流, 单相, 800 V, 3 A, MSBL, 1.1 V, 4 引脚
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.9 A, 800 V, 3.7 ohm, 10 V, 4.1 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 80 V, 85 MHz, 20 W, 8 A, 40 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 14.1 A, 30 V, 0.0036 ohm, 10 V, 2.5 V
(EN)NEXPERIA
二极管 小信号, 单, 300 V, 250 mA, 1.1 V, 50 ns, 3 A
(EN)
VISHAY
MOSFET, N CHANNEL, 20V, 5.4A, CHIPFET-8
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 48 A, 30 V, 0.007 ohm, 10 V, 1.7 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 8.5 A, 700 V, 0.49 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 35 A, 30 V, 1.2 mohm, 8 V, 1.1 V
(EN)
DIODES INC.
二极管 桥式整流, 单相, 200 V, 400 mA, SMD, 1 V, 4 引脚
(EN)
ON SEMICONDUCTOR
肖特基整流器, 20 V, 3 A, 单, DO-214AB, 2 引脚, 500 mV
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 150 MHz, 540 mW, 4 A, 370 hFE
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.041 ohm, -4.5 V, -1 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 40 V, 200 MHz, 1.15 W, 600 mA, 100 hFE
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5 A, -30 V, 0.045 ohm, -10 V, -1 V
(EN)
