规格：工作温度最高值 150°C,
DIODES INC.
单管二极管 齐纳, 9.1 V, 350 mW, SOT-23, 6 %, 3 引脚, 150 °C
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -5.1 A, -30 V, 0.135 ohm, -10 V, -1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.5 A, 500 V, 1.5 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, -25 V, 4 mA, 16 mA, -8 V, SOT-23, JFET
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 4.7 A, 20 V, 0.024 ohm, 4.5 V, 700 mV
(EN)
MULTICOMP
单管二极管 齐纳, 6.2 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
VISHAY
肖特基整流二极管, 5A 60V DO-201AD
(EN)
VISHAY
MOSFET, N CHANNEL, 400V, 3.1A, TO-252-3
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.115 ohm, -10 V, -2.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.9 A, 100 V, 250 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 220 mA, 25 V, 5 ohm, 4.5 V, 850 mV
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 8.2 V, 500 mW, SOD-523, 2 引脚, 150 °C
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 3.5 A, -30 V, 59 mohm, -10 V, -600 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 150 V, 0.0255 ohm, 10 V, 5 V
(EN)
NEXPERIA
肖特基二极管, 500MA, 40V, SOT-23
(EN)
VISHAY
单管二极管 齐纳, 13 V, 3 W, DO-214AC, 5 %, 2 引脚, 150 °C
(EN)
MICRO COMMERCIAL COMPONENTS
齐纳二极管, 5W, 6.2V, DO-15
(EN)
NEXPERIA
单管二极管 齐纳, 4.7 V, 300 mW, SOD-323, 5 %, 2 引脚, 150 °C
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 65 V, 300 MHz, 310 mW, 100 mA, 110 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0039 ohm, 8 V, 1.3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.05 A, 900 V, 5 ohm, 10 V, 3.75 V
(EN)
VISHAY
单管二极管 齐纳, 12 V, 200 mW, SOD-323, 5 %, 2 引脚, 150 °C
(EN)
NEXPERIA
单晶体管 双极, NPN, PNP, 40 V, 300 MHz, 350 mW, 200 mA, 100 hFE
(EN)
