规格：工作温度最高值 150°C,
ON SEMICONDUCTOR
肖特基整流器, 200 V, 3 A, 单, DO-214AB, 2 引脚, 840 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
肖特基整流二极管, 30V, 200mA, SOT-23
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0088 ohm, -4.5 V, -1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V
(EN)
VISHAY
单管二极管 齐纳, 3.3 V, 410 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 40 V, 0.0059 ohm, 10 V, 1.8 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.38 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 5 A, 55 V, 0.031 ohm, 10 V, 1.6 V
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 5 A, 60 V, 0.034 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
双极性晶体管, 中等功率, NPN, 45V, 1A, 3SOT89
(EN)
VISHAY
晶体管, MOSFET, N沟道, 370 mA, 500 V, 3 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 24 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -1.3 A, -20 V, 0.64 ohm, -1.8 V, -400 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 45 V, 100 MHz, 300 mW, 500 mA, 40 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 7.7 A, 60 V, 200 mohm, 10 V, 4 V
(EN)
VISHAY
肖特基整流二极管阵列, 共阴极, 7A, D-PAK
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 20V, 0.00024Ω, 600mA, SC-89-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双极晶体管阵列, NPN, 40 V, 700 mW, 500 mA, 35 hFE, SuperSOT
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双极性晶体管, NPN, HFE 300
(EN)
STMICROELECTRONICS
单晶体管 双极, PNP, -100 V, 20 W, -2 A, 200 hFE
(EN)
NEXPERIA
肖特基整流器, 30 V, 500 mA, 双共阴极, TO-236AB, 3 引脚, 430 mV
(EN)
INFINEON
双路场效应管, MOSFET, N和P, 1.4 A, 30 V, 0.119 ohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.6 A, -30 V, 0.063 ohm, -10 V, -1.9 V
(EN)
ROHM
单管二极管 齐纳, AEC-Q101, 6.8 V, 1 W, SOD-123, 2 引脚, 150 °C
(EN)
