规格：工作温度最高值 150°C,
VISHAY
齐纳二极管, 5.6V, 225mW, SOT-23
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -230 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13 A, -35 V, 9.7 mohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
二极管 小信号, 单, 75 V, 300 mA, 1 V, 4 ns, 4 A
(EN)
NEXPERIA
单晶体管 双极, NPN, 65 V, 100 MHz, 250 mW, 100 mA, 200 hFE
(EN)
NEXPERIA
双极晶体管阵列, AEC-Q101, 双NPN, 45 V, 350 mW, 100 mA, 200 hFE, DFN1010B
(EN)
NEXPERIA
P CHANNEL, DMOS FET, -30V, -520MA, 3-SOT-23
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 200 mA, 800 V, 15.5 ohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 1 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 4.1 A, 20 V, 0.024 ohm, 4.5 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -130 mA, -50 V, 10 ohm, -5 V, -1.6 V
(EN)STMICROELECTRONICS
单晶体管 双极, PNP, 300 V, 15 W, -500 mA, 30 hFE
(EN)
VISHAY
快速/超快二极管, 单, 200 V, 3 A, 900 mV, 20 ns, 100 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 600 mA, 20 V, 700 mohm, 4.5 V, 600 mV
(EN)
DIODES INC.
单管二极管 齐纳, 4.3 V, 500 mW, SOD-123, 7 %, 2 引脚, 150 °C
(EN)
DIODES INC.
单管二极管 齐纳, 18 V, 200 mW, SOD-323, 5 %, 2 引脚, 150 °C
(EN)VISHAY
场效应管, MOSFET, P沟道, -60V, 4.7A, SOIC
(EN)
VISHAY
二极管 桥式整流, 单相, 800 V, 40 A, SIP, 1.1 V, 4 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
二极管 桥式整流, 单相, 800 V, 500 mA, SOIC, 1 V, 4 引脚
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 8.2 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
VISHAY
晶体管, N沟道, 12A, 20V, 3.5W
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 6 A, 620 V, 0.78 ohm, 10 V
(EN)
