规格：工作温度最高值 150°C,
NEXPERIA
晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.176 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 220 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.7 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
齐纳二极管, 350mW, 8.2V, SOT-23
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 2.9 mohm, 8 V, 1.1 V
(EN)
TAIWAN SEMICONDUCTOR
快速/超快二极管, 500 V, 3 A, 单, 1.7 V, 35 ns, 100 A
(EN)
INFINEON
晶体管, MOSFET, 汽车, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 60 V, 220 MHz, 250 mW, 1 A, 500 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8.7 A, -30 V, 14 mohm, -10 V, -3 V
(EN)NXP
晶体管 双极-射频, PNP, 12 V, 5 GHz, 300 mW, -35 mA, 50 hFE
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 5.47 A, 20 V, 0.021 ohm, 10 V, 950 mV
(EN)DIODES INC.
双路场效应管, MOSFET, 半桥接, N和P沟道, 3.98 A, 30 V, 0.033 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 2.2 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.2 A, -40 V, 0.022 ohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 250 V, 220 mohm, 10 V, 4 V
(EN)
NEXPERIA
二极管 小信号, 单, 85 V, 215 mA, 1.25 V, 4 ns, 4 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.3 A, 150 V, 0.113 ohm, 10 V, 2.5 V
(EN)
DIODES INC.
单晶体管 双极, PNP, -80 V, 120 MHz, 1.5 W, -4.3 A, 250 hFE
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 950 V, 3 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 4.7 V, 300 mW, SOD-323, 5 %, 2 引脚, 150 °C
(EN)VISHAY
肖特基整流器, 60 V, 5.5 A, 单, TO-252AA, 3 引脚, 570 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 2 A, 60 V, 350 mohm, 5 V, 1 V
(EN)
ON SEMICONDUCTOR
双极性晶体管, PNP, -350V
(EN)
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 12 V, 150 mW, SOD-523, 2 引脚, 150 °C
(EN)
VISHAY
MOSFET, DUAL N CHANNEL, 20V, 4.1A, TSSOP-8
(EN)
