规格：工作温度最高值 150°C,
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.003 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -50 A, -100 V, 17.8 mohm, -10 V, -2.8 V
(EN)
MULTICOMP
单晶体管 双极, 达林顿, NPN, 30 V, 625 mW, 500 mA, 20000 hFE
(EN)
VISHAY
肖特基整流器, 25 V, 1.5 A, 单, DO-214AC, 2 引脚, 500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.0082 ohm, 10 V, 1.2 V
(EN)
VISHAY
二极管 桥式整流, 单相, 200 V, 1 A, 通孔安装, 1.1 V, 4 引脚
(EN)
MULTICOMP
肖特基二极管, 10A, 45V, TO-220AC
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8.4 A, 60 V, 200 mohm, 10 V, 4 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 23 A, 100 V, 13 mohm, 10 V
(EN)
MULTICOMP
齐纳二极管, 1W, 13V, DO-41
(EN)
NEXPERIA
单管二极管 齐纳, 5.1 V, 400 mW, SOD-323, 2 %, 2 引脚, 150 °C
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 300 V, 250 mW, 100 mA, 40 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 36 A, 100 V, 0.019 ohm, 10 V, 3.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.02 ohm, 10 V, 1.85 V
(EN)
ROHM
标准恢复二极管, 400 V, 1 A, 单, 1.1 V, 25 A
(EN)
VISHAY
快速/超快二极管, 200 V, 4 A, 单, 1 V, 20 ns, 125 A
(EN)
NEXPERIA
单管二极管 齐纳, 27 V, 500 mW, SOD-323F, 2 %, 2 引脚, 150 °C
(EN)
NEXPERIA
单管二极管 齐纳, 5.1 V, 375 mW, SOD-123F, 2 %, 2 引脚, 150 °C
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3 A, 500 V, 2.6 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 0.05 ohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 1.6 A, -100 V, 350 mohm, -10 V, -2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -80V, 2.2A TO-236
(EN)
MULTICOMP
快速/超快功率二极管, 600 V, 8 A, 单, 1.5 V, 50 ns, 100 A
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 400 mA, 200 V, 1.6 ohm, 10 V, 2.8 V
(EN)
