规格：工作温度最高值 150°C,
VISHAY
场效应管, MOSFET, N沟道
(EN)
DIODES INC.
单管二极管 齐纳, 3.6 V, 200 mW, SOD-323, 5 %, 2 引脚, 150 °C
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 20 V, 0.00075 ohm, 10 V, 800 mV
(EN)
ON SEMICONDUCTOR
晶体管, PNP, 45V, SOT-23
(EN)
VISHAY
场效应管, MOSFET, 双路N沟道, 20V, 5.2A, TSSOP-8
(EN)
NEXPERIA
单管二极管 齐纳, 7.5 V, 375 mW, SOD-123F, 2 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -40V, 8.4mA
(EN)
INFINEON
晶体管, MOSFET, P沟道, 2.2 A, -150 V, 240 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
二极管 小信号, 单, 75 V, 200 mA, 1 V, 4 ns, 4 A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2 A, 55 V, 0.14 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.03 ohm, -4.5 V, -1.5 V
(EN)
ROHM
单管二极管 齐纳, AEC-Q101, 10 V, 200 mW, SOD-323FL, 2 引脚, 150 °C
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 10 A, 30 V, 0.0122 ohm, 10 V, 1.8 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 26 A, 30 V, 0.0038 ohm, 10 V, 1 V
(EN)
DIODES INC.
二极管 小信号, 双共阴极, 85 V, 215 mA, 1.25 V, 3 μs, 4 A
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
(EN)
ON SEMICONDUCTOR
双极性晶体管
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.5 A, 500 V, 800 mohm, 10 V, 4 V
(EN)
RENESAS
晶体管, MOSFET, P沟道, -3.3 A, -30 V, 0.054 ohm, -10 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 1.8 A, 30 V, 0.145 ohm, 10 V, 2.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.044 ohm, 10 V, 1.4 V
(EN)
NEXPERIA
肖特基整流器, 60 V, 3 A, 单, SOD-128, 2 引脚, 530 mV
(EN)INTERNATIONAL RECTIFIER
P CHANNEL POWER MOSFET, HEXFET, -20V, -4.3A, SOT-23
(EN)
