规格：工作温度最高值 150°C,
INFINEON
晶体管, MOSFET, N沟道, 9 A, 550 V, 0.36 ohm, 10 V, 3 V
(EN)
TOSHIBA
功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 1.7 ohm, 10 V, 2.4 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 160 V, 250 mW, 300 mA, 80 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 6.6 A, 500 V, 0.86 ohm, 13 V, 3 V
(EN)
VISHAY
整流器, 快速, 单路, 1A, 1KV, DO-214AC-2
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 5.4 A, 20 V, 0.03 ohm, 4.5 V, 1.2 V
(EN)
MULTICOMP
单晶体管 双极, NPN, 160 V, 300 MHz, 625 mW, 600 mA, 80 hFE
(EN)
MULTICOMP
快速/超快功率二极管, 600 V, 3 A, 单, 1.7 V, 35 ns, 100 A
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 68 A, 30 V, 0.0078 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR
二极管 小信号, 单, 100 V, 200 mA, 1.25 V, 6 ns, 500 mA
(EN)
TAIWAN SEMICONDUCTOR
标准恢复二极管, 100 V, 1 A, 单, 1.1 V, 30 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
肖特基整流器, 45 V, 12 A, 单, DO-201AD, 2 引脚, 550 mV
(EN)
INFINEON
晶体管, MOSFET, BRT, 双N沟道, 300 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.5 A, 30 V, 19 mohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 60 V, 0.092 ohm, 10 V, 2.5 V
(EN)
TAIWAN SEMICONDUCTOR
肖特基整流器, 150 V, 7.5 A, 单, TO-220AC, 2 引脚, 950 mV
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 1.76 ohm, 10 V, 3.75 V
(EN)
MULTICOMP
二极管, 标准恢复, 1A, 100V, DO-204AL-2
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, NPN
(EN)
ON SEMICONDUCTOR/FAIRCHILD
二极管 桥式整流, 单相, 600 V, 8 A, SIP, 1 V, 4 引脚
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 2.2 V
(EN)
ROHM
单管二极管 齐纳, AEC-Q101, 33 V, 200 mW, SOD-323FL, 2 引脚, 150 °C
(EN)
TAIWAN SEMICONDUCTOR
标准功率二极管, 1 kV, 800 mA, 单, 1.3 V, 500 ns, 30 A
(EN)
ON SEMICONDUCTOR
双极晶体管
(EN)
