规格：工作温度最高值 150°C,
TAIWAN SEMICONDUCTOR
肖特基整流器, 100 V, 15 A, 双共阴极, TO-220AB, 3 引脚, 920 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 70 A, 24 V, 0.0037 ohm, 10 V, 1.45 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0024 ohm, 10 V, 3 V
(EN)
MULTICOMP
肖特基整流器, 50 V, 16 A, 单, TO-220AC, 2 引脚, 750 mV
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, 1.95A, SOT-23
(EN)
DIODES INC.
单晶体管 双极, NPN, 40 V, 150 MHz, 500 mW, 1 A, 300 hFE
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 304 mA, 60 V, 1 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
肖特基整流器, 20 V, 1 A, 单, DO-216AA, 2 引脚, 595 mV
(EN)
MULTICOMP
快速/超快功率二极管, 600 V, 16 A, 双共阴极, 1.5 V, 50 ns, 150 A
(EN)
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 6.8 A, 20 V, 0.016 ohm, 4.5 V, 650 mV
(EN)
DIODES INC.
标准功率二极管, 600 V, 1 A, 单, 1.1 V, 1.8 μs, 30 A
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V
(EN)
NEXPERIA
单管二极管 齐纳, 4.3 V, 375 mW, SOD-123F, 2 %, 2 引脚, 150 °C
(EN)
INFINEON
晶体管, MOSFET, P沟道, -18 A, -55 V, 0.11 ohm, -10 V, -4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -900 mA, -8 V, 0.28 ohm, -4.5 V, -400 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 35 A, 30 V, 1.4 mohm, 10 V, 1.55 V
(EN)
NEXPERIA
单晶体管 双极, 通用, PNP, -40 V, 250 MHz, 250 mW, -200 mA, 100 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, AEC-Q101, PNP, 40 V, 100 MHz, 2 W, -3 A, 220 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 80 V, 1.25 W, 1.5 A, 100 hFE
(EN)
DIODES INC.
单管二极管 齐纳, 27 V, 500 mW, SOD-123, 7 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.5 A, 60 V, 0.092 ohm, 10 V, 2.6 V
(EN)
STMICROELECTRONICS
肖特基二极管
(EN)
