规格：工作温度最高值 150°C,
VISHAY
晶体管, MOSFET, P沟道, 3.5 A, -200 V, 1.5 ohm, -10 V, -4 V
(EN)
VISHAY
快速/超快功率二极管, 600 V, 15 A, 双共阴极, 2 V, 60 ns, 150 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 150V, 0.0173OHM, 7.5A, SOIC-8
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.2 A, 200 V, 800 mohm, 10 V, 4 V
(EN)MULTICOMP
肖特基整流器, 100 V, 16 A, 双共阴极, TO-220AB, 3 引脚, 850 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 6.9 A, 20 V, 0.013 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -350 V, 200 MHz, 625 mW, 20 hFE
(EN)MULTICOMP
肖特基整流器, 200 V, 20 A, 双共阴极, TO-220AB, 3 引脚, 920 mV
(EN)
ON SEMICONDUCTOR
射频双极晶体管
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 300 V, 150 MHz, 7 W, 100 mA, 60 hFE
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.86 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.3 A, 800 V, 1.9 ohm, 10 V, 3.75 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 1.7 A, 400 V, 3.6 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.6 A, 80 V, 0.077 ohm, 10 V
(EN)
NEXPERIA
小信号肖特基二极管, 单, 20 V, 500 mA, 390 mV, 10 A, 150 °C
(EN)
ON SEMICONDUCTOR
双极晶体管阵列, 双PNP, -30 V, 661 mW, -100 mA, 420 hFE, SOT-563
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 5.3 A, 60 V, 0.046 ohm, 10 V, 1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
小信号肖特基二极管, 双共阳极, 40 V, 120 mA, 380 mV, 600 mA, 150 °C
(EN)
DIODES INC.
单管二极管 齐纳, 3.6 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 8.7A, 6-PQFN
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 500 mA, 100 hFE
(EN)
NEXPERIA
肖特基二极管, 500MA, 20V, SOT-23
(EN)
