规格：工作温度最高值 150°C,
INTERNATIONAL RECTIFIER
晶体管, 单路, IGBT, 600V, 60A
INFINEON
双路场效应管, MOSFET, 双N沟道, 6.5 A, 30 V, 0.023 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5 A, 150 V, 0.041 ohm, 10 V, 2 V
(EN)
NEXPERIA
单管二极管 齐纳, 10 V, 300 mW, SOD-523, 2 %, 2 引脚, 150 °C
(EN)
INFINEON
晶体管, MOSFET, P沟道, 6.6 A, -100 V, 480 mohm, -10 V, -4 V
(EN)
NEXPERIA
肖特基整流器, 单, 30 V, 2 A, SOD-123W, 2 引脚, 420 mV
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 5.1 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 760 mA, -20 V, 0.26 ohm, -4.5 V, -450 mV
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 750 mohm, 10 V, 3.75 V
(EN)
RENESAS
晶体管, MOSFET, P沟道, -1.8 A, -60 V, 0.158 ohm, -10 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 48 mohm, -4.5 V, -1.4 V
(EN)
ON SEMICONDUCTOR
达林顿双极晶体管
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6.2 A, 40 V, 0.021 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 13 V, 225 mW, SOT-23, 6 %, 3 引脚, 150 °C
(EN)
NEXPERIA
肖特基整流器, 单, 30 V, 1 A, SOD-128, 2 引脚, 450 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.032 ohm, -4.5 V, -400 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.016 ohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 20 V, 0.0041 ohm, 10 V, 600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, PNP, -40V, TO-92
(EN)
VISHAY
NPN/PNP MOSFET, 60V, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -60 V, 65 W, -5 A, 1000 hFE
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0075 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 40 V, 300 MHz, 350 mW, 200 mA, 100 hFE
(EN)
