规格：工作温度最高值 150°C,
MULTICOMP
单晶体管 双极, 通用, PNP, 80 V, 12.5 W, 1.5 A, 40 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, FemtoFET™, P沟道, -1.7 A, -20 V, 0.11 ohm, -8 V, -950 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.5 A, 100 V, 0.019 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
单晶体管 双极, PNP, -40 V, 1.6 W, -5 A, 250 hFE
(EN)MULTICOMP
单晶体管 双极, 达林顿, NPN, 80 V, 40 W, 4 A, 750 hFE
(EN)
MULTICOMP
单晶体管 双极, 达林顿, PNP, 100 V, 6 MHz, 125 W, 16 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N沟道, 30V, 30A, POWER56
(EN)
STMICROELECTRONICS
小信号肖特基二极管, 单, 100 V, 6 A, 780 mV, 100 A, 150 °C
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0032 ohm, -10 V, -3 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 73 A, 650 V, 0.032 ohm, 10 V, 2 V
(EN)
NEXPERIA
小信号肖特基二极管, 双共阳极, 30 V, 200 mA, 320 mV, 600 mA, 150 °C
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.042 ohm, 10 V, 3 V
(EN)
VISHAY
单管二极管 齐纳, 3.9 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 150 °C
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11.2 A, 100 V, 0.0081 ohm, 10 V, 2.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 0.54 ohm, 5 V, 2 V
(EN)
MULTICOMP
肖特基整流器, 60 V, 16 A, 单, TO-220AC, 2 引脚, 750 mV
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5 A, 60 V, 45 mohm, 10 V, 1.7 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 0.16 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 达林顿, NPN, 80 V, 65 W, 5 A, 1000 hFE
(EN)
NEXPERIA
单管二极管 齐纳, 18 V, 300 mW, SOD-523, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0008 ohm, 10 V, 1.9 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00099 ohm, 10 V, 1.5 V
(EN)
MULTICOMP
快速/超快二极管, 400 V, 3 A, 单, 1.3 V, 35 ns, 100 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -65 V, 150 MHz, 500 mW, -100 mA, 110 hFE
(EN)
MICRO COMMERCIAL COMPONENTS
开关二极管, 75V, SOT-363
(EN)
