规格：工作温度最高值 150°C,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.1 A, 150 V, 0.057 ohm, 10 V, 4 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 5.6 V, 150 mW, SOD-523, 2 引脚, 150 °C
(EN)
MULTICOMP
单晶体管 双极, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 220 hFE
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 9.1 V, 3 W, SMD, 5 %, 2 引脚, 150 °C
(EN)
MULTICOMP
肖特基整流器, 45 V, 20 A, 双共阴极, TO-220AB, 3 引脚, 840 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.8 A, 100 V, 130 mohm, 10 V, 2 V
(EN)
TAIWAN SEMICONDUCTOR
肖特基整流器, 微型, 单, 60 V, 3 A, DO-214AA, 2 引脚, 750 mV
(EN)
MULTICOMP
肖特基整流器, 100 V, 16 A, 单, TO-220AC, 3 引脚, 850 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 147 A, 30 V, 0.00152 ohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 78 A, 30 V, 0.0023 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 334 A, 25 V, 0.056 ohm, 10 V, 2.1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 19.3A, SOIC-8
(EN)VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 6.5 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 4.5 A, 30 V, 0.045 ohm, 10 V, 2.6 V
(EN)
VISHAY
肖特基整流器, 单, 30 V, 3 A, DO-214AC, 2 引脚, 450 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -3 A, -20 V, 80 mohm, -4.5 V, -700 mV
(EN)
DIODES INC.
单晶体管 双极, 达林顿, NPN, 40 V, 330 mW, 300 mA, 20000 hFE
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 5.7 A, 800 V, 0.8 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 20.1 A, 30 V, 0.0022 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 330 A, 40 V, 0.0006 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 150 V, 0.015 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 110 MHz, 710 mW, 2 A, 40 hFE
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 18 A, 30 V, 0.0027 ohm, 10 V, 2.1 V
(EN)MULTICOMP
单晶体管 双极, 达林顿, PNP, 100 V, 80 W, 8 A, 200 hFE
(EN)
