规格：工作温度最高值 150°C,
ON SEMICONDUCTOR
单管二极管 齐纳, 3.3 V, 500 mW, SOD-523, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.6 A, -12 V, 40 mohm, -4.5 V, -600 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, -50A, TO-252-3
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 400 V, 4 MHz, 100 W, 12 A, 8 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, -10.5 A, -40 V, 0.013 ohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 50 V, 30 MHz, 625 mW, 200 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, PNP, 100 V, 25 MHz, 1.75 W, 2 A, 12 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0016 ohm, 10 V, 1.7 V
(EN)
MULTICOMP
二极管 桥式整流, 单相, 100 V, 4 A, SIP, 1.1 V, 4 引脚
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 130 A, 30 V, 0.0026 ohm, 11.5 V, 2.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 270 A, 40 V, 0.00085 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 67 A, 30 V, 0.0034 ohm, 10 V, 2.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3 A, 400 V, 1.8 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -26.6 A, -20 V, 0.0051 ohm, -4.5 V, -1.5 V
(EN)
MULTICOMP
二极管 桥式整流, 单相, 800 V, 10 A, SIP, 1 V, 4 引脚
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 73 A, 30 V, 4.26 mohm, 10 V, 1.7 V
(EN)
VISHAY
桥接整流器, 单相, 3A, 600V, KBPM-4
(EN)
INFINEON
晶体管, MOSFET, N沟道, 15.2 A, 200 V, 0.077 ohm, 10 V, 3 V
(EN)
VISHAY
肖特基整流器, 30 V, 12 A, 双共阴极, TO-252AA, 3 引脚, 550 mV
(EN)
VISHAY
单管二极管 齐纳, 15 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
INFINEON
单晶体管, IGBT, 85 A, 1.95 V, 350 W, 600 V, TO-274AA, 3 引脚
(EN)
TAIWAN SEMICONDUCTOR
标准功率二极管, 单, 600 V, 1 A, 1.1 V, 30 A
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 80 V, 50 MHz, 1.5 W, 3 A, 12 hFE
(EN)
