规格：工作温度最高值 150°C,
ROHM
单管二极管 齐纳, AEC-Q101, 9.1 V, 200 mW, SOD-323FL, 2 引脚, 150 °C
(EN)
VISHAY
二极管 桥式整流, 单相, 50 V, 1.5 A, 通孔安装, 1 V, 4 引脚
(EN)
TAIWAN SEMICONDUCTOR
标准恢复二极管, 50 V, 1 A, 单, 1.2 V, 200 ns, 30 A
(EN)
VISHAY
标准二极管, 1A, 800V, DO-204AL
(EN)
STMICROELECTRONICS
肖特基整流器, 单, 25 V, 10 A, TO-263, 3 引脚, 460 mV
(EN)
NTE ELECTRONICS
双极性晶体管, PNP, -25V, -200mA, TO-92
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0033 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2.5 A, 200 V, 650 mohm, 5 V, 2.5 V
(EN)
VISHAY
肖特基整流器, 单, 45 V, 10 A, TO-220AC, 2 引脚, 840 mV
(EN)
MULTICOMP
二极管 小信号, 单, 75 V, 200 mA, 1.25 V, 6 ns, 2 A
(EN)
VISHAY
桥式整流器, 单相, 4A, 1KV, 通孔安装
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 18 A, 30 V, 0.0025 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.4 A, -20 V, 0.125 ohm, -4.5 V, 450 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 30 V, 0.0013 ohm, 10 V, 1.8 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 5.1A, D-PAK
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -60 V, 2 MHz, 1.75 W, -10 A, 5 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 9.3A, 30V, SOIC
(EN)
INFINEON
晶体管, MOSFET, P沟道, 11.5 A, -12 V, 14 mohm, -4.5 V, -900 mV
(EN)
MULTICOMP
场效应管, MOSFET, N沟道, 60V, 1.2Ω, 115mA, SOT-23
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 115 mA, 78 V, 2.53 ohm, 10 V, 1.76 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -220 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.027 ohm, -4.5 V, -700 mV
(EN)VISHAY
肖特基整流器, 单, 60 V, 15 A, TO-220AC, 2 引脚, 620 mV
(EN)
