规格：工作温度最高值 150°C,
VISHAY
双路场效应管, MOSFET, 双N沟道, 370 mA, 60 V, 1.4 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -7 A, -30 V, 0.026 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 9.1 V, 225 mW, SOT-23, 6 %, 3 引脚, 150 °C
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 30 mohm, 4.5 V, 1.2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 28 A, 30 V, 0.01 ohm, 10 V, 1.2 V
(EN)DIODES INC.
单晶体管 双极, PNP, 400 V, 50 MHz, 500 mW, -150 mA, 100 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 42 A, 25 V, 0.0173 ohm, 3.3 V, 1.35 V
(EN)DIODES INC.
单晶体管 双极, 高增益, PNP, 20 V, 290 MHz, 350 mW, 4 A, 450 hFE
(EN)
VISHAY
MOSFET, N & P CHANNEL, 20V, 6.7A, TSSOP-8
(EN)
VISHAY
单管二极管 齐纳, 36 V, 3 W, DO-214AC, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 136 A, 30 V, 0.0015 ohm, 10 V, 2.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)MICROCHIP
晶体管, MOSFET, P沟道, 2 A, -6 V, 0.07 ohm, -4.5 V, -1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 200 V, 0.11 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
小信号肖特基二极管, 单, 30 V, 200 mA, 800 mV, 600 mA, 150 °C
(EN)
NEXPERIA
双极晶体管阵列, PNP, -65 V, 300 mW, -100 mA, 290 hFE, SOT-363
(EN)
ON SEMICONDUCTOR/FAIRCHILD
快速/超快功率二极管, 单, 600 V, 3 A, 1.7 V, 45 ns, 100 A
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V V(BR)DSS
(EN)
MULTICOMP
二极管 桥式整流, 2WOXMG系列, 单相, 100 V, 2 A, 通孔安装, 1.1 V, 4 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
N CHANNEL MOSFET, 60V, 400mA, TO-92
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.9 A, 30 V, 12 mohm, 4.5 V, 1.1 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 60 V, 40 W, 4 A, 100 hFE
(EN)
MULTICOMP
单晶体管 双极, NPN, 45 V, 170 MHz, 300 mW, 500 mA, 250 hFE
(EN)
