规格：工作温度最高值 150°C,
NEXPERIA
单管二极管 齐纳, 3.6 V, 250 mW, SOT-23, 5 %, 3 引脚, 150 °C
(EN)
VISHAY
晶体管, MOSFET, P沟道, -25 A, -20 V, 0.0082 ohm, -4.5 V, -400 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, 11 A, -200 V, 500 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 9 A, 100 V, 0.18 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 25 V, 100 MHz, 1 W, 1.5 A, 120 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.5 A, -20 V, 35 mohm, -4.5 V, -900 mV
(EN)
DIODES INC.
标准功率二极管, 1 kV, 1 A, 单, 1.1 V, 1.2 μs, 25 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 60 V, 0.092 ohm, 10 V, 2.5 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 4.9 A, 30 V, 0.044 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 300 MHz, 15 W, 2 A, 300 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 60 V, 20 W, 10 A, 5 hFE
(EN)
VISHAY
肖特基整流器, 双共阴极, 60 V, 30 A, TO-263AC, 3 引脚, 700 mV
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 200 V, 125 mohm, 10 V, 3 V
(EN)
ROHM
单管二极管 齐纳, AEC-Q101, 3.9 V, 200 mW, SOD-323FL, 2 引脚, 150 °C
(EN)
VISHAY
桥式整流器, 单相, 500mA, 600V, TO-269AA-4
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 3.1A SOT-223
(EN)
VISHAY
肖特基整流器, 30 V, 7 A, 双共阴极, TO-252AA, 3 引脚, 520 mV
(EN)
VISHAY
二极管 桥式整流, 单相, 1 kV, 1.5 A, SMD, 1.1 V, 4 引脚
(EN)
VISHAY
标准功率二极管, 单, 1 kV, 6 A, 1 V, 2.5 μs, 400 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 1KV, 1.6mA
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -6.6 A, -100 V, 0.41 ohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
二极管 桥式整流, 单相, 100 V, 8 A, SIP, 1 V, 4 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -100 V, 3 MHz, 65 W, -6 A, 15 hFE
(EN)
DIODES INC.
小信号肖特基二极管, 单, 10 V, 750 mA, 580 mV, 17 A, 150 °C
(EN)
