规格：工作温度最高值 150°C,
VISHAY
单管二极管 齐纳, 39 V, 3 W, DO-214AC, 5 %, 2 引脚, 150 °C
(EN)
DIODES INC.
单晶体管 双极, PNP, 100 V, 140 MHz, 2 W, -2 A, 200 hFE
(EN)
NEXPERIA
单管二极管 齐纳, 3 V, 375 mW, SOD-123F, 2 %, 2 引脚, 150 °C
(EN)
MULTICOMP
单晶体管 双极, 达林顿, NPN, 80 V, 125 W, 10 A, 1000 hFE
(EN)
VISHAY SILICONIX
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, KSE, NPN, 300 V, 20 W, 500 mA, 30 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.2 A, -200 V, 0.145 ohm, -10 V, -4 V
(EN)VISHAY
标准功率二极管, 1.2 kV, 40 A, 单, 1.45 V, 475 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单管二极管 齐纳, 8.2 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6.8 A, -30 V, 0.03 ohm, 25 V, -2.1 V
(EN)
MULTICOMP
肖特基二极管, 2A, 60V, SMB
(EN)
MULTICOMP
小信号肖特基二极管, 单, 60 V, 2 A, 700 mV, 50 A, 150 °C
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3.7 A, -20 V, 60 mohm, -4.5 V, -700 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
(EN)
NEXPERIA
单管二极管 齐纳, 15 V, 300 mW, SOD-523, 2 %, 2 引脚, 150 °C
(EN)
ROHM
双极晶体管阵列, AEC-Q101, 双NPN, 50 V, 150 mW, 150 mA, 120 hFE, SOT-563
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
(EN)
VISHAY
晶体管, JFET, JFET, -36 V, 5 mA, 15 mA, -6 V, TO-206AF, JFET
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 80 V, 12.5 W, 1.5 A, 63 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4.9 A, -30 V, 0.036 ohm, -10 V, -2.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.5 A, 80 V, 0.032 ohm, 10 V, 4 V
(EN)
VISHAY
标准恢复二极管, 单, 400 V, 1 A, 1.3 V, 150 ns, 30 A
(EN)
MULTICOMP
二极管, 桥式整流器, 单相, 1A, 600V
(EN)
NEXPERIA
晶体管 双极-射频, NPN, 65 V, 100 MHz, 200 mW, 100 mA, 180 hFE
(EN)
