规格：工作温度最高值 150°C,
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 36 V, 200 mW, SOD-323F, 2 引脚, 150 °C
(EN)
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 3.9 V, 150 mW, SOD-523, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2 A, -12 V, 0.084 ohm, -4.5 V, -700 mV
(EN)
NTE ELECTRONICS
晶体管, PNP, -40V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 64 A, -55 V, 20 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 7.5 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, 100 V, 3 MHz, 40 W, 3 A, 10 hFE
(EN)DIODES INC.
单管二极管 齐纳, 33 V, 500 mW, SOD-123, 6 %, 2 引脚, 150 °C
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 60V, 50A, 0.0078OHM, SON-8
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 13 A, 550 V, 0.18 ohm, 10 V, 4 V
(EN)MULTICOMP
单晶体管 双极, 达林顿, NPN, 400 V, 80 W, 7 A, 150 hFE
(EN)
MULTICOMP
肖特基整流器, 50 V, 3 A, 单, DO-201AA, 2 引脚, 700 mV
(EN)
TOSHIBA
晶体管, MOSFET, 功率, P沟道, -16 A, -30 V, 0.0039 ohm, -10 V, -800 mV
(EN)
MULTICOMP
快速/超快功率二极管, 600 V, 1 A, 单, 1.7 V, 75 ns, 30 A
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 3.3 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1 A, 20 V, 0.3 ohm, 4.5 V, 500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3 A, 250 V, 0.097 ohm, 10 V, 3 V
(EN)
VISHAY
二极管 桥式整流, 单相, 600 V, 3 A, KBPC, 1.1 V, 4 引脚
(EN)
NXP
晶体管 双极-射频, NPN, 15 V, 5 GHz, 500 mW, 100 mA, 80 hFE
(EN)MULTICOMP
单晶体管 双极, 通用, NPN, 80 V, 15 MHz, 50 W, 10 A, 60 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -45 V, 1.25 W, -1.5 A, 25 hFE
(EN)
MULTICOMP
快速/超快二极管, 400 V, 3 A, 单, 1.3 V, 35 ns, 125 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
齐纳二极管
(EN)
