规格：工作温度最高值 150°C,
ON SEMICONDUCTOR
晶体管, JFET, -30 V, 1.2 mA, 3 mA, -1.5 V, SOT-883, JFET
(EN)
VISHAY
单管二极管 齐纳, 10 V, 300 mW, SOT-23, 5 %, 3 引脚, 150 °C
(EN)
DIODES INC.
快速/超快二极管, 单, 400 V, 1 A, 1.25 V, 25 ns, 30 A
(EN)
DIODES INC.
快速/超快二极管, 单, 400 V, 1 A, 1.3 V, 25 ns, 30 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 39 A, 200 V, 66 mohm, 10 V, 5 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 2.3 A, 25 V, 100 mohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
ROHM
单管二极管 齐纳, 7.5 V, 1 W, SOD-123FL, 2 引脚, 150 °C
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, N和P沟道, 8 A, 30 V, 0.018 ohm, 10 V, 1.6 V
(EN)
MULTICOMP
二极管, 标准恢复, 1A, 800V, DO-214AC-2
(EN)MULTICOMP
快速/超快二极管, 200 V, 1 A, 单, 950 mV, 35 ns, 30 A
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 100 mA, 450 V, 60 ohm, 0 V
(EN)
MULTICOMP
单晶体管 双极, 通用, PNP, -60 V, 3 MHz, 65 W, -6 A, 30 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.0236 ohm, 4.5 V, 810 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 2.8 A, 600 V, 2 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 9.4 A, 20 V, 14 mohm, 4.5 V, 1 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 250 mA, 800 V, 13 ohm, 30 V, 3.75 V
(EN)TAIWAN SEMICONDUCTOR
快速/超快二极管, 400 V, 1 A, 单, 1.3 V, 35 ns, 30 A
(EN)
BROADCOM LIMITED
晶体管, 射频FET, 高线性度, 7 V, 500 mA, 1.5 W, 50 MHz, 6 GHz, SOT-89
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 65 A, 30 V, 4.92 mohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0103 ohm, -10 V, -2.5 V
(EN)
NEXPERIA
单管二极管 齐纳, 3.3 V, 250 mW, SOT-23, 5 %, 3 引脚, 150 °C
(EN)
VISHAY
标准二极管, 6A, 600V, P600
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
