规格：工作温度最高值 150°C,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 60 V, 50 W, 2 A, 500 hFE
(EN)
ROHM
单晶体管 双极, NPN, 80 V, 280 MHz, 10 W, 2 A, 120 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 100V, 0.0114OHM, 49A, POWER 56-8
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -40 V, 0.0097 ohm, -10 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1 A, 60 V, 1.5 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 380 mA, 60 V, 1.19 ohm, 10 V, 1 V
(EN)
MICRO COMMERCIAL COMPONENTS
二极管, 超快恢复型, 1A, 100V, DO-214AC
(EN)
IXYS SEMICONDUCTOR
晶闸管, 1200 V, 100 mA, 34 A, 53 A, SOT-227B, 4 引脚
(EN)
INFINEON
场效应管, MOSFET, N沟道
(EN)VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 660 mA, 200 V, 1 ohm, 10 V, -1.4 V
(EN)
DIODES INC.
单管二极管 齐纳, 15 V, 200 mW, SOD-323, 6 %, 2 引脚, 150 °C
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 25 V, 0.0038 ohm, 20 V, 1.9 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 40 V, 1.35 W, 2 A, 900 hFE
(EN)
DIODES INC.
双极晶体管阵列, 双路补偿高增益, NPN, PNP, 40 V, 2.75 W, 2 A, 500 hFE, SOT-223
(EN)
STMICROELECTRONICS
单晶体管 双极, 达林顿, PNP, 100 V, 70 W, 10 A, 750 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.075 ohm, -8 V, -950 mV
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V
(EN)
VISHAY
BRIDGE RECTIFIER, SINGLE PHASE, 1A, 400V, DFS-4
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6 A, -12 V, 26 mohm, -4.5 V, -500 mV
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 600 mA, 20 V, 0.47 ohm, 4.5 V, 700 mV
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.6 A, 900 V, 1.1 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -80 V, 50 MHz, 12.5 W, -3 A, 12 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, PNP, -100 V, 80 W, 8 A, 200 hFE
(EN)
