规格：工作温度最高值 150°C,
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 50 A, 2.5 V, 312 W, 1.2 kV, TO-3P, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -100 V, 3 MHz, 30 W, -1 A, 15 hFE
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -2.5 A, -60 V, 0.105 ohm, -10 V, -2.6 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 750 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 250 V, 10 MHz, 15 W, 1 A, 10 hFE
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 450 mV
(EN)
VISHAY
二极管 桥式整流, 单相, 100 V, 1.5 A, 通孔安装, 1 V, 4 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4.3 A, -35 V, 0.045 ohm, -10 V, -1.8 V
(EN)
MICRO COMMERCIAL COMPONENTS
SWITCHING DIODE, 120V, SOD-123
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 69 A, 30 V, 0.0037 ohm, 10 V, 1.9 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 60 V, 150 MHz, 500 mW, 1 A, 150 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -100 V, 115 MHz, 2.1 W, -2.7 A, 295 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -300 V, 50 MHz, 1.5 W, -500 mA, 25 hFE
(EN)
VISHAY
肖特基整流器, 45 V, 15 A, 双共阴极, TO-247AC, 3 引脚, 760 mV
(EN)
DIODES INC.
单晶体管 双极, PNP, -40 V, 100 MHz, 2 W, -2 A, 150 hFE
(EN)
TAIWAN SEMICONDUCTOR
快速/超快二极管, 200 V, 2 A, 单, 950 mV, 35 ns, 50 A
(EN)
NEXPERIA
二极管 小信号, 四共阳极, 90 V, 250 mA, 1.25 V, 4 ns, 4 A
(EN)
MULTICOMP
快速/超快二极管, 100 V, 1 A, 单, 950 mV, 35 ns, 30 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -400 V, 625 mW, -300 mA, 40 hFE
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道, 60V, 4A, SOT-223
(EN)
VISHAY
整流桥
(EN)
STMICROELECTRONICS
单晶体管 双极, 达林顿, NPN, 60 V, 40 W, 4 A, 750 hFE
(EN)
