规格：工作温度最高值 150°C,
VISHAY
快速/超快二极管, 150 V, 1 A, 单, 920 mV, 15 ns, 30 A
(EN)
INFINEON
标准功率二极管, 1.2 kV, 50 A, 单, 2.15 V, 243 ns, 102 A
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -1.7 A, -60 V, 0.39 ohm, -10 V, -1 V
(EN)
TAIWAN SEMICONDUCTOR
肖特基整流器, 30 V, 1 A, 单, SMD, 2 引脚, 500 mV
(EN)
INFINEON
双路场效应管, MOSFET, 双路N和P通道, 6.8 A, 30 V, 0.022 ohm, 10 V, 1.8 V
(EN)
MULTICOMP
单晶体管 双极, NPN, 400 V, 4 MHz, 75 W, 4 A, 10 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 123 A, 100 V, 0.0042 ohm, 10 V, 3.6 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V
(EN)
NEXPERIA
单管二极管 齐纳, 5.1 V, 500 mW, SOD-123F, 2.5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, 30 V, -2 mA, -15 mA, 2 V, SOT-23, JFET
(EN)
MULTICOMP
标准恢复二极管, 100 V, 1 A, 单, 1.1 V, 30 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, UNIFET系列, 600V, 6.5A, TO-220F
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
TAIWAN SEMICONDUCTOR
小信号肖特基二极管, 双共阳极, 30 V, 200 mA, 500 mV, 600 mA, 150 °C
(EN)
INFINEON
场效应管, MOSFET
(EN)
NEXPERIA
单晶体管 双极, 双NPN, 30 V, 165 MHz, 2 W, 1 A, 180 hFE
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 500 mA, 400 V, 17 ohm, 0 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 8 A, 900 V, 1.12 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.3 A, 20 V, 0.165 ohm, 4.5 V, 400 mV
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -150 V, 300 MHz, 225 mW, -500 mA, 50 hFE
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 35 A, 650 V, 0.067 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 250V, 14A
(EN)
