规格：工作温度最高值 150°C,
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 800 mA, 100 V, 1.5 ohm, 10 V, 800 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 45 V, 1.5 W, 1.5 A, 40 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双极晶体管
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 60 A, 30 V, 0.0013 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9.5 A, 200 V, 0.29 ohm, 10 V, 4 V
(EN)
MULTICOMP
标准功率二极管, 1 kV, 3 A, 单, 1.1 V, 100 A
(EN)
NEXPERIA
单管二极管 齐纳, 5.1 V, 300 mW, SOD-323, 2 %, 2 引脚, 150 °C
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 5.3 A, 1.7 kV, 1 ohm, 20 V, 2.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 53.7 A, 150 V, 0.0148 ohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -18 A, -20 V, 0.0064 ohm, -4.5 V, -500 mV
(EN)DIODES INC.
单晶体管 双极, 达林顿, NPN, 30 V, 170 MHz, 2 W, 1 A, 20000 hFE
(EN)
ON SEMICONDUCTOR
单晶体管, IGBT, 30 A, 1.75 V, 117 W, 600 V, TO-220, 3 引脚
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 900 mA, 100 V, 650 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.2 A, 20 V, 24 mohm, 4.5 V, 820 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 50 V, 300 MHz, 250 mW, 150 mA, 120 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, PNP, 100 V, 2 W, 8 A, 1000 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0012 ohm, 10 V, 2.8 V
VISHAY
单管二极管 齐纳, AEC-Q101, 18 V, 3 W, DO-214AC, 5 %, 2 引脚, 150 °C
(EN)
NEXPERIA
单管二极管 齐纳, 3 V, 250 mW, SOT-23, 2 %, 3 引脚, 150 °C
(EN)
NEXPERIA
单晶体管 双极, PNP, 20 V, 140 MHz, 500 mW, 1 A, 85 hFE
(EN)
ON SEMICONDUCTOR
双极性晶体管
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 60 V, 350 mW, 100 mA, 20 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, -5.6 A, -100 V, 0.6 ohm, -10 V, -4 V
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 1 A, 45 V, 0.3 ohm, 4.5 V, 1.5 V
(EN)
MULTICOMP
单晶体管 双极, NPN, 45 V, 170 MHz, 300 mW, 500 mA, 160 hFE
(EN)
