规格：工作温度最高值 150°C,
INFINEON
场效应管, MOSFET
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 2.1W, SOT-223
(EN)
ON SEMICONDUCTOR/FAIRCHILD
整流二极管, 标准恢复型, 10A, 1.5kV
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.53 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管 双极预偏置/数字, BRT, SOT-23
ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 130 MHz, 20 W, -8 A, 140 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双极性晶体管, PNP, -100V, TO-220
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8.7 A, 500 V, 0.7 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
(EN)
TAIWAN SEMICONDUCTOR
快速/超快二极管, 200 V, 2 A, 单, 950 mV, 25 ns, 80 A
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 50 V, 180 MHz, 20 W, 5 A, 200 hFE
(EN)
NEXPERIA
单管二极管 齐纳, 12 V, 250 mW, TO-236AB, 2 %, 3 引脚, 150 °C
(EN)
VISHAY
晶体管, MOSFET, N沟道, 53.7 A, 150 V, 0.0148 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.8 A, 55 V, 40 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 80 V, 3 MHz, 36 W, 4 A, 15 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 2.2 A, 900 V, 5.6 ohm, 10 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 50 V, 300 MHz, 250 mW, 150 mA, 200 hFE
(EN)
NEXPERIA
双极晶体管阵列, NPN, 60 V, 2.3 W, 6.7 A, 300 hFE, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
达林顿双极晶体管
(EN)
TAIWAN SEMICONDUCTOR
二极管 小信号, 单, 85 V, 500 mA, 1.25 V, 4 A
(EN)
MULTICOMP
单管二极管 齐纳, BZT52C系列, 10 V, 200 mW, SOD-323, 2 引脚, 150 °C
(EN)
