规格：工作温度最高值 150°C,
VISHAY
场效应管, N通道, MOSFET, 250V, 14A SMD-220
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 33A, TO-247AD-3
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -70 A, -60 V, 0.01 ohm, -10 V, -2.6 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 27 A, 40 V, 0.0019 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 0.71 ohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -410 mA, -25 V, 0.85 ohm, -4.5 V, -820 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 240mA, TO-236
(EN)
NEXPERIA
肖特基整流器, 双共阴极, 20 V, 500 mA, TO-236AB, 3 引脚, 390 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 4.2 mohm, -10 V, -1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 20 V, 22 mohm, 4.5 V, 700 mV
(EN)ON SEMICONDUCTOR
肖特基整流器, 双共阴极, 100 V, 15 A, TO-263, 3 引脚, 850 mV
(EN)
NEXPERIA
单管二极管 齐纳, 6.2 V, 300 mW, SOD-323, 5 %, 2 引脚, 150 °C
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 14 A, 30 V, 0.0066 ohm, 10 V, 1.8 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -80 V, 40 MHz, 20 W, -8 A, 60 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 300 MHz, 1.5 W, 200 mA, 100 hFE
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 6.4 A, 100 V, 125 mohm, 10 V, 4 V
(EN)NEXPERIA
单管二极管 齐纳, 43 V, 250 mW, SOT-23, 5 %, 3 引脚, 150 °C
(EN)
MULTICOMP
肖特基二极管, 16A, 45V, TO-220AB
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 16 A, 30 V, 0.0075 ohm, 10 V, 1 V
(EN)
MULTICOMP
单晶体管 双极, NPN, 30 V, 100 MHz, 625 mW, 800 mA, 100 hFE
(EN)
NXP
双极性晶体管, 中等功率, PNP, -80V, -1A, 4SOT223
(EN)
INTERNATIONAL RECTIFIER
晶体管, 单路, IGBT, 600V, 85A
(EN)
